Samsung Electronics has announced that it has developed what it claims is the industry's first 60nm-class 2Gb DDR2 and will begin mass producing it later this year. Compared with 80nm 2Gb DDR2, the 60nm-class with a speed of 800-megabits per second has improved DRAM performance up to 20%. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40% using the finer 60nm-class process technology.
Besides its greater efficiencies, the new 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions, which will accelerate the move toward higher densities in high-end market segments, according to Samsung
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